Microstructure and photoluminescence properties of Nd-doped (Ba,Sr)TiO3thin films
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولMicrostructure and optical properties of Pr3+-doped hafnium silicate films
In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...
متن کاملTransparent conductive Nd-doped ZnO thin films
Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display t...
متن کاملOptical, Photoluminescence and Thermoluminescence Properties Investigation of ZnO and Mn Doped ZnO Nanocrystals
ZnO and ZnO: Mn nanocrystals synthesized via reverse micelle method. The structural properties nanocrystals were investigated by XRD and Transmission electron microscopy (TEM). The XRD results indicate that the synthesized nanocrystals had a pure wurtzite (hexagonal phase) structure. The various optical properties of these nanocrystals such as optical band gap energy, refractive index, dielectr...
متن کاملPhotoluminescence properties of erbium doped InGaN epilayers
We report on the photoluminescence properties of erbium Er doped InxGa1−xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 m emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2009
ISSN: 1742-6596
DOI: 10.1088/1742-6596/152/1/012084